| Domain | Definition |
| Aerospace | High Electron Mobility Transistor. This is a particular kind of transistor that is especially appropriate for use in microwave amplifiers. (references) |
| Space | High-electron-mobility transistor, a low-noise amplifier used in DSN. (references) |
| Technology | High Electron Mobility Transistor. (references) |
| Wikipedic | HEMT stands for High Electron Mobility Transistor, and is also called heterostructure FET (HFET). A HEMT is a Field effect transistor with a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of an n-doped region. A commonly used combination is GaAs with AlGaAs. The effect of this junction is to create a very thin layer where the Fermi energy is above the conduction band, giving the channel very low resistance (or to put it another way, "high electron mobility"). This layer is sometimes called a two-dimensional electron gas. As with all the other types of FETs, a voltage applied to the gate alters the conductivity of this layer. (references) |
Source: compiled by the editor from various references; see credits. | Top |
