| Domain | Definition | ||
| Electrical Engineering | A gate electrode of a depletion-type MOS field-effect transistor, offset towards the source-region; a depletion channel exists in the absence of induction from the gate so no overlap with either end region is required; gate-drain overlap results in the Miller effect. Source: European Union. (references) | ||
Source: compiled by the editor from various references; see credits. | Top | ||
